Fingerprinting Defects in Hexagonal Boron Nitride via Multi-Phonon Excitation

verfasst von

Pablo Tieben, Andreas W. Schell

Abstract

Single photon emitters in hexagonal boron nitride (hBN) have gathered a lot of attention due to their favorable emission properties and the manifold of possible applications. Despite extensive scientific effort, the exact atomic origin of these emitters has remained unknown thus far. Recently, several studies have tied the emission in the yellow spectral region to carbon-related defects, but the exact atomic structure of the defects remains elusive. In this study, photoluminescence emission and excitation spectroscopy is performed on a large number of emitters within this region. By comparing the experimental data with theoretical predictions, the origin of yellow single photon emission in hexagonal boron nitride is determined. Knowledge of this atomic structure and its optical properties is crucial for the reliable implementation of these emitters in quantum technologies.

Organisationseinheit(en)

Institut für Festkörperphysik
QuantumFrontiers
PhoenixD: Simulation, Fabrikation und Anwendung optischer Systeme

Externe Organisation(en)

Physikalisch-Technische Bundesanstalt (PTB)
Johannes Kepler Universität Linz (JKU)

Typ

Artikel

Journal

Advanced optical materials

Band

12

ISSN

2195-1071

Publikationsdatum

16.07.2024

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Atom- und Molekularphysik sowie Optik

Elektronische Version(en)

https://doi.org/10.48550/arXiv.2308.09018 (Zugang: Offen)
https://doi.org/10.1002/adom.202302700 (Zugang: Offen)