Fingerprinting Defects in Hexagonal Boron Nitride via Multi-Phonon Excitation

authored by

Pablo Tieben, Andreas W. Schell

Abstract

Single photon emitters in hexagonal boron nitride (hBN) have gathered a lot of attention due to their favorable emission properties and the manifold of possible applications. Despite extensive scientific effort, the exact atomic origin of these emitters has remained unknown thus far. Recently, several studies have tied the emission in the yellow spectral region to carbon-related defects, but the exact atomic structure of the defects remains elusive. In this study, photoluminescence emission and excitation spectroscopy is performed on a large number of emitters within this region. By comparing the experimental data with theoretical predictions, the origin of yellow single photon emission in hexagonal boron nitride is determined. Knowledge of this atomic structure and its optical properties is crucial for the reliable implementation of these emitters in quantum technologies.

Organisation(s)

Institute of Solid State Physics
QuantumFrontiers
PhoenixD: Photonics, Optics, and Engineering - Innovation Across Disciplines

External Organisation(s)

National Metrology Institute of Germany (PTB)
Johannes Kepler University of Linz (JKU)

Type

Article

Journal

Advanced optical materials

Volume

12

ISSN

2195-1071

Publication date

16.07.2024

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics

Electronic version(s)

https://doi.org/10.48550/arXiv.2308.09018 (Access: Open)
https://doi.org/10.1002/adom.202302700 (Access: Open)