Research infrastructure in the PhoenixD Cluster of Excellence

Vapor deposition is a coating process with which different materials such as conductors, insulators or alloys can be deposited. The institute uses a Leybold Optics LAB500plus vapor deposition system, which features both an electron beam evaporator and a thermal evaporator.

Specifications

• 4“-Substrates
• Pt, Cr, Cu, SiO₂, Al₂O₃, others on request
• Sample size 8”
• Writing speed 1cm²/h
• Acceleration 50kV
• Minimum feature size 8 nm
• Evaporation
  • Electron beam evaporation
  • Thermal evaporation

Please contact

Folke Dencker, dencker@impt.uni-hannover.de

The DWL66+ system from Heidelberg Instruments Mikrotechnik GmbH for direct laser exposure is available at the Institute of Microproduction Technology. It can be used to expose substrates with edge lengths of up to 9" and achieve structure resolutions of up to 300 nm. The range of functions also includes grey tone exposure with up to 1000 gradations to create 2.5-dimensional structures.

Specifications

• Minimum structure size: 0.3 µm (2 mm write mode) or 1 µm (10 mm write mode)
• Writing speed: 3 mm2/min (2 mm writing mode) or 150 mm2/min (10 mm writing mode)
• Diode laser wavelength: 405 nm
• Maximum substrate thickness: 12 mm
• Maximum exposure area: 200 x 200 mm2
• Real-time autofocus: optical or pneumatic
• Backside adjustment

Please contact

Folke Dencker, dencker@impt.uni-hannover.de

SEKI SDS6370: up to 2”, Gasses CH4, H2, O2, N2, in situ pyrometer and interferometer, additional UHV turbo pump kit, heating stage

OFC20SF Specialty Fiber Draw Tower, Rosendahl Nextrom Oy:

• height 12 m,
• Preform diameter 10 - 50 mm
• Fibre diameter 80 µm - 10 mm
• Line speed 0.1 - 400 m/min
• coating materials: dual layer acrylate, polyimide

Contact

Dr. Michael Steinke, michael.steinke@hitec.uni-hannover.de

Modified Chemical Vapor Deposition (MCVD)-setup with chelate doping system for fabrication of silica optical fibre preforms, Lumentum d.o.o., CVD-08 with CDS-03:

• 4x bubblers for liquid precursors,
• 4x high-temperature sublimators,
• scanning pyrometer

Please contact

Dr. Michael Steinke, michael.steinke@hitec.uni-hannover.de
Matthias Ließmann, liesmann@iqo.uni-hannover.de

Ion Beam Etching - Commonwealth Scientific Corporation is used to remove and structure thin layers. The process is a dry etching process. The material is removed purely physically by the impact of high-energy particles on a material surface. At the IMPT, an ion beam system from Commonwealth Scientific Corporation is used.

Specifications

• 4“-Substrates
• Etch gasses: Cl, BCl3, CF4, SF6, O2, N2, Ar,
• Load lock,
• End point detection
• Variable power output

Please contact

Folke Dencker, dencker@impt.uni-hannover.de

The alpha300 apyron from WITec provides the IMPT with a highly automated confocal Raman microscope for high-end spectroscopy applications and confocal Raman imaging.

Specifications

• Motorised 6-position objective revolver.
• Köhler illumination (brightfield) with motorised field and aperture shutters
• Lift stage with 5-phase stepper motor with 10 nm step size
• Motorised x-y sample positioner with 25 nm step size
• Motorised camera coupler and multi-wavelength laser coupler
• Motorised multi-output coupler with AutoBeam Output Adjustment Unit (OAU)
• Calibration source for automatic spectrometer calibration
• EasyLink controller for simple and intuitive operation
• 405 nm diode laser (class 3B) with LP Raman filter, LL filter and TruePower
• 532 nm DPSS laser (class 3B) with LP Raman filter, LL filter and TruePower
• 633 nm diode laser (class 3B) with LP Raman filter, LL filter and TruePower
• Ultra-high-throughput spectrometer UHTS600 with triple grating holder
• Spectroscopic gratings with 300, 1800 and 2400 lines/mm 
• High sensitivity BI-EMCCD camera with up to 1300 spectra/s
• Objective 10x from Zeiss EC Epiplan DIC with 0.25 NA
• Objective 50x from Zeiss EC Epiplan DIC with 0.75 NA
• Objective 100x from Zeiss EC Epiplan-Neofluar DIC with 0.90 NA
• Objective 10x from Zeiss EC Epiplan-Apochromat with 0.95 NA
• Stray light protection with coded magnetic switches for LSK 1M operation
• Antibunching extension with MultiHarp, two APDs, decouplers, beam splitter, filter sliders and additional optical light guides
• Oxford Microstat He2 for temperatures from 3.2 K to 500 K 
• WITec Control and Project FIVE software package
• TrueMatch software extension for database management
• High-performance PC for data acquisition

Please contact

Folke Dencker, dencker@impt.uni-hannover.de

The Lightfab 3D is a laser processing system for laser structuring, laser welding and laser-induced selective etching for the production of scalable technical systems. The Lightfab 3D enables macroscopic processing in the form of cutting and 3D structuring by local ablation. Furthermore, 3D structures can be produced subtractively with an accuracy of ~1 µm in a two-step process. Due to the high energy density at the focal point, the etching properties of the material are first locally modified by the precise exposure with the fs laser. Subsequently, the exposed structures can be selectively removed by a wet chemical etching process in an ultrasonic bath. Furthermore, the hermetic joining of optically transparent peripheral components is possible.

Specifications

• Laser with a wavelength of 1030 nm
• Exposure area XY: 200 x 200 mm²; Z: 150 mm²
• Precision XY: 150 nm; Z: 1 µm
• Pulse duration: 400 fs - 5ps
• Frequency: 100 kHz - 10 MHz
• Pulse energy: > 15 µJ from 500 kHz
• Materials e.g. diamond, quartz glass, borosilcate glass, sapphire

Please contact

Folke Dencker, dencker@impt.uni-hannover.de

Light Conversion’s Pharos Femtosecond Laser system: 20W, 2mJ, 1 kHz – 1 MHz, <190fs plus Interferometric Sensorhead Sensofar S onix, 3 axes translation with Aerotech stages

3 linear axes with additional rotation and tilting unit, absolute positioning accuracy: 50µm, travel speed: 100mm/s, galvanometer scanner, heating plate max. Temp. 600°C, fibre conveyor speed up to 4000 mm/min, min. fibre diameter 0.2 mm

DWL 400 from Heidelberg Instruments for high-speed direct laser writing on 400x400 mm² substrates using a UV diode laser source

EVG620NT from EV Group GmbH with two UV sources (365 and 405+436 nm). Mask aligner for 150x150 mm² substrates with integrated UV nanoimprint system. Hard-, soft-, vacuum contact and proximity exposure mode

S neox 3D Optical Profiler from Sensofar Metrology with 5 operation modes (white light interferometry, thin film reflectometry, confocal, variable focus, and AFM) on substrate sizes up to 100x100 mm²

SEKI SDS6k: up to 12”, Gasses CH4, H2, O2, N2, in situ pyrometer and interferometer

Ion beam etching can be used to produce homogeneous and reproducible structuring of materials. The addition of reactive gases turns purely physical ion beam etching into a combination of a chemical and physical etching process. Reactive ion beam etching RIBE is used as a dry etching process for the structuring of microsystems.

Specifications

• Processing of 4“ and 6“ wafers
• Substrate rotation 1 to 20 rpm, holder can be tilted in-situ from 0° to 165°
• Optical endpoint detection
• Available reactive gases: oxygen, chlorine, boron trichloride, sulfur hexafluoride, carbon tetrafluoride
• CAIBE also possible in addition to IBE, RIBE

Please contact

Folke Dencker, dencker@impt.uni-hannover.de

PhoenixD has a semi-automatic 56i wire bonding system from F&S BONDTEC. It is characterised by the high flexibility of the interchangeable bonding heads, which are suitable for all wire bonding and test procedures. It enables fully automatic bonding with manual component change and offers the option of saving bonding programmes. The customisable bond settings allow fine tuning of loop shapes as well as force and power profiles. The system also features extremely powerful automatic image recognition and innovative, intuitively programmable bonder software. The bond head can be exchanged to utilise different wires and processes. A ball-wedge and a thin-wire wedge-wedge head are currently available.

Laser Nanofactory from Femtika, direct laser writing system for two-photon polymerization with 1 W at 515 nm and selective laser etching with 10 W at 1030 nm. Integrated digital holographic microscope at 675 nm.

EVG: Illumination at 365 nm, 405 nm and 436nm, Alignment accuracy < 1µm, Reproduction of features with a size of less than 100nm and 10nm residual layer

Active Fiber Thulium laser system: >0,5 kW, <30 fs, >1016 W/cm², 100 kHz, 2000 nm

Wafer Bonder: AML Aligner Wafer Bonder Rock: sample size: chip level to wafer size 200mm, in situ radical activated Bonding, vapor injection, ultra-high vacuum bonding, in situ alignment, max temperature >500°C, anodic bonding, UV bonding

SCIA TRIMM 200: sample size: up to 200mm wafer, etch gases: Ar, O2 and Halogenides, etching of optical layer inhomogeneity to angstrom precision

Photonic Wire Bonder: Vanguard Automation GmbH (a Mycronic company) - SONATA1000 Series

Computing System (GPU): Hybrid architecture of four fast H100 GPUs and sixteen A100 GPUs for large amounts data, double precision

TRUMPF high-power laser system: >2 kW, <30 fs, >1017 W/cm², 100 kHz, 1030 nm, X-ray driving Laser, already granted with the building